Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• nanowires in combination with good electrical conductivity and thermoelectric power reaching 500 µV/K enables their application as p-type components for environmentally friendly thermoelectric devices [3][4]. Investigating the influence of relative humidity (RH) and understanding conductivity mechanisms in

Kondo effects in small-bandgap carbon nanotube quantum dots

• Patryk Florków,
• Damian Krychowski and
• Stanisław Lipiński

Beilstein J. Nanotechnol. 2020, 11, 1873–1890, doi:10.3762/bjnano.11.169

• success. The two physical quantities that are the object of our interest are linear conductance and thermoelectric power (TEP) . Both quantities can be determined from the transmissions, which, in turn, can be calculated from the knowledge of Green’s functions obtained in SBMFA or EOM: where fα(E) is

• fluctuations (Figure 7, Figure 5d). Other spin–orbital fluctuations, not related solely to active states in Kondo processes, weakly depend on the gate voltage and the value they take depends on the symmetry. Figure 6b shows the temperature dependencies of conduction, thermoelectric power, and the coefficient

Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

• Dominik Wrana,
• Karol Cieślik,
• Wojciech Belza,
• Christian Rodenbücher,
• Krzysztof Szot and
• Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

• [1], hydrogen production [2], resistive switching [3] and organic electronics [4][5] to so-called thermoelectric power generators [6]. The performance of all of the abovementioned applications is extremely sensitive to the work function (WF) of the active oxide layer. As a vast majority of

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• ; nanoparticles; power factor; thermoelectric power; Introduction Bismuth telluride (Bi2Te3) is an important semiconductor widely used as thermoelectric (TE) material for room-temperature applications to convert waste heat into electricity. The efficiency of a TE material can be defined by figure of merit (ZT

Determination of Young’s modulus of Sb₂S₃ nanowires by in situ resonance and bending methods

• Liga Jasulaneca,
• Raimonds Meija,
• Alexander I. Livshits,
• Juris Prikulis,
• Subhajit Biswas,
• Justin D. Holmes and
• Donats Erts

Beilstein J. Nanotechnol. 2016, 7, 278–283, doi:10.3762/bjnano.7.25

• sulfide; in situ; mechanical properties; nanowires; Young’s modulus; Introduction Antimony sulfide or stibnite is a highly anisotropic semiconductor material with potential applications in thermoelectric and optoelectronic [1][2] devices due to its high achievable thermoelectric power and

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• thermoelectric power [16]. The maximization of the power factor S2σ is important in those applications that require a power as high as possible, and that have enough thermal energy available on the hot source. However, in many practical applications, one of the key points is to exploit as much as possible the

• with aspect ratios greater than 50:1 [109] or even 100:1 [110][111] have been fabricated, and thermoelectric power generators based on vertical DRIE fabricated nanowires, few micrometers long, have been tested [112][113]. A very promising technique, which could allow for the fabrication of vertical

Integration of ZnO and CuO nanowires into a thermoelectric module

• Dario Zappa,
• Simone Dalola,
• Guido Faglia,
• Elisabetta Comini,
• Matteo Ferroni,
• Caterina Soldano,
• Vittorio Ferrari and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2014, 5, 927–936, doi:10.3762/bjnano.5.106

• synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom

• ) performance of a material, including the thermal conductivity κ, the electrical conductivity σ and the Seebeck coefficient S. Further, the efficiency of a thermoelectric device depends on the thermoelectric power factor (TPF) and the figure of merit (ZT) of the material, which are defined as S2σ and S2Tσ/κ

• (Table 1). Thermoelectric power factor (TPF) was estimated for both CuO and ZnO nanowires, based on sheet resistance Rs. The electrical conductivity was calculated as σ = 1/(Rs·h), where h is the thickness of each strip. We found values of σ of 2.0 S/m for copper oxide and 0.7 S/m for zinc oxide. While

Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

• Debashis De,
• Sitangshu Bhattacharya,
• S. M. Adhikari,
• A. Kumar,
• P. K. Bose and
• K. P. Ghatak

Beilstein J. Nanotechnol. 2011, 2, 339–362, doi:10.3762/bjnano.2.40

• , be written as [24] where n0 and EF are applicable for bulk samples. The thermoelectric power of the carriers in semiconductors in the presence of a classically large magnetic field is independent of scattering mechanisms and is determined only by their energy band spectra [25]. The magnitude of the

• thermoelectric power G can be written under the condition of carrier degeneracy [25] as Using Equation 23 and Equation 24, one obtains Therefore, we can experimentally determine LD by knowing the experimental curve of G versus carrier concentration at a fixed temperature. It is evident that the DSL for a system